產(chǎn)品分類
坩堝下降設(shè)備
所屬分類：
第二代半導(dǎo)體工藝設(shè)備
概要：
◆ 主要用于4-8英寸砷化鎵、磷化銦等化合物單晶生長(zhǎng) ◆ 設(shè)備由機(jī)架、安部支撐機(jī)構(gòu)、加熱器和控制系統(tǒng)組成 ◆ 能夠?qū)崿F(xiàn)安移動(dòng)和轉(zhuǎn)動(dòng)的精確控制
關(guān)鍵詞：
坩堝下降爐
坩堝下降設(shè)備
產(chǎn)品概述/Product Introduction：
♦ 主要用于4-8英寸砷化鎵、磷化銦等化合物單晶生長(zhǎng)
Mainly used for single crystal growth of 4-8 inches of gallium arsenide, indium phosphide and other compounds
♦ 設(shè)備由機(jī)架、安瓿支撐機(jī)構(gòu)、加熱器和控制系統(tǒng)組成
The equipment consists of a rack, ampoule support mechanism, heater and control system
♦ 能夠?qū)崿F(xiàn)安瓿移動(dòng)和轉(zhuǎn)動(dòng)的精確控制
Accurate control of ampoule movement and rotation can be realized
產(chǎn)品特點(diǎn)/Product Characteristics：
♦ 工業(yè)計(jì)算機(jī)控制系統(tǒng)(WINDOWS系統(tǒng)界面，操作方便簡(jiǎn)潔)
Industrial computer control system (WINDOWS system interface, easy and concise operation)
♦ 關(guān)鍵部件均采用進(jìn)口,確保設(shè)備的高可靠性
The key parts are imported to ensure the high reliability of the equipment
♦ 控溫精度高,溫區(qū)控溫穩(wěn)定性好
High temperature control precision and good temperature control stability in temperature zone
♦ 具有斷電報(bào)警、超溫、欠溫報(bào)警、極限超溫報(bào)警等多種安全保護(hù)功能
lt has various safety protection functions such as power failure alarm, over-temperature alarm, under-tempera-ture alarm and extreme over-temperature alarm
♦ 速度可調(diào)的梯形波、三角波及正弦波等旋轉(zhuǎn)功能
Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed
♦ 單晶質(zhì)量高
High quality single crystal
技術(shù)指標(biāo)/Technical Indicators：
|
晶片尺寸:4/6/8英寸 Nafer size: 4/6/8 inches |
|
制程溫度范圍:300-2200℃ Maximum heater temperature: 2200℃ |
|
加熱器最高溫度2200℃ Maximum heater temperature: 2200℃ |
|
控溫段數(shù):多段控溫 Number ?f temperature control sections:multisections temperature control |
|
爐腔壓力:10MPa(最大) Chamber pressure:10MPa(Maximum) |
應(yīng)用范圍/Scope：
♦ 廣泛用于材料的紺蝸下降的單晶生長(zhǎng)
Bridgman-descending single crystal growth widely used in materials
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